Magnetoresistive effect element having magnetoresistive layer and underlying metal layer
US6147843A · kind A · utility
9Cited by
12References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 24, 1997 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jan 24, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a magnetoresistive element, an underlying metal layer is formed on a substrate, and a magnetoresistive layer is formed on the underlying metal layer. The underlying metal layer has a thickness of about 0.1 to 3.0 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.