Integrated semiconductor lasers and photodetectors
US6148016A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1998 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Nov 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18372
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating vertical cavity lasers and photodetectors on the same substrate from a single epitaxial layer to form integrated laser/photodetector structures. A DBR/cavity/DBR photodetector structure is formed on the substrate with the DBR on the input side of the photodetector being fabricated from relatively low index contrast, high refractive index semiconducting layers. Some of those same DBR layers on the input side of the photodetector are then converted from a low index contrast, high refractive index semiconducting material to a low refractive index material by, for example, etching the DBR/cavity/DBR structure down to the substrate layer and using lateral oxidation or etching, to form relatively high index contrast, high reflectivity mirrors for the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.