Method for forming barrier layer for copper metallization
US6150270A · kind A · utility
45Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Jan 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprises forming a barrier layer for copper metallization, selectively forming a silicon film on a surface of copper wiring formed on the main surface of a semiconductor substrate, and reacting the silicon film with a non-copper metal and/or nitrogen to form a barrier layer in a self-aligned manner relative to the copper wiring. In the method, the capacitance increase in the copper wirings formed is prevented, and the barrier layer formed has a satisfactory barrier property of protecting the copper wirings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.