Patent · US Expired

Micromechanical system fabrication method using (111) single crystalline silicon

US6150275A · kind A · utility

13Cited by
8References
2Claims
0Family size

Inventors

Key dates

Filing dateFeb 16, 1999
Grant dateNov 21, 2000
Priority date
Expiry dateFeb 16, 2019

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/014
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.