Thin-film transistor monolithically integrated with an organic light-emitting diode
US6150668A · kind A · utility
219Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Sep 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/60
Abstract
A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.