Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials
US6150703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Jun 29, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics is suitable for use in a wide variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave modes. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, applied along at least a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.