Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby
US6150762A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Jan 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32532
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a cathode for a plasma etching apparatus includes steps for making the inside of holes formed in the cathode and the surface of the cathode a hard surface so as to prevent particle generation while the cathode is in use for etching a wafer. These steps include: a) forming a plurality of holes in a silicon substrate; b) carrying out a physical-surface treatment on the surface of the silicon substrate using slurry; and c) carrying out a chemical-surface treatment for removing protrusions inside the holes formed on the silicon substrate and on the surface of the silicon substrate using potassium hydroxide (KOH). The cathode manufactured by this method has a hard surface formed thereon and inside the holes, and the hard surface has no protrusions. Without protrusions, no particles can be generated from protrusions being etched and loosened during the etching process, so no particles adhere to the wafer being etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.