Gas-insulated high-voltage semiconductor valve means
US6151201A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Oct 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gas-insulated semiconductor valve for high voltage power has an elongated valve stack with a plurality of semiconductor elements. The valve stack is provided with electrostatic shields for reducing the stresses on the insulating medium. The shields comprise a plurality of annular shields distributed along the longitudinal axis of the valve stack. The shields are arranged in planes which are substantially perpendicular to the longitudinal axis of the stack and surround the valve stack. The curved part of each shield has a substantially constant radius of curvature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.