Ferroelectric nonvolatile memory and oxide multi-layered structure
US6151240A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 31, 1996 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | May 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory includes a silicon substrate having a buffer layer on the substrate and a conductive oxide thin film on the buffer layer. A bismuth based layered ferroelectric oxide thin film is formed on the conductive oxide and a further conductive layer is formed on the ferroelectric layer. In one embodiment, the buffer layer is substantially lattice matched with the silicon substrate, the conductive oxide thin film is substantially lattice matched with the buffer layer, and the bismuth-based layered ferroelectric oxide thin film is substantially lattice matched with the conductive oxide thin film. Additionally, the invention includes the use of a superlattice structure for the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.