Semiconductor laser
US6151348A · kind A · utility
4Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Nov 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes at least an active layer and a saturable absorbing layer, and a compressive strain amount in the saturable absorbing layer is set to be greater than a value of compressive strain in the active layer by about 0.3% or more. Alternatively, a semiconductor laser includes at least an active layer, a saturable absorbing layer, and a light guiding layer disposed in the vicinity of the saturable absorbing layer; and a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer by about 0.3% or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.