Fabrication method of inductor devices using a substrate conversion technique
US6153489A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
Abstract
A fabrication method of high performance integrated inductor devices using a substrate conversion technique is disclosed. By employing the trench-shaped porous silicon with high insulating property, the lossy characteristic of the silicon substrate is essentially to minimize. Also, by employing the conductive doped layer interposed between the porous silicon layer and the silicon substrate, the parasitic capacitance between metal lines and the silicon substrate is remarkably decreased. The present invention allows fabrication of high performance integrated inductors having high quality factor. Also, this invention prevents mutual-coupling between the silicon substrate and metal lines. As a result, integrated inductor devices according to this invention is readily adaptable for use in radio frequency integrated circuit (RF IC).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.