Advanced methods for making semiconductor devices by low temperature direct bonding
US6153495A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Mar 9, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device from a plurality of semiconductor substrates includes the steps of: processing at least one surface of at least one of the substrates; thinning at least one of the substrates; bonding the processed and thinned substrates together so that the at least one processed surface defines an outer surface of the semiconductor device; and annealing the bonded together substrates at a relatively low anneal temperature so as to not adversely effect the at least one processed surface. The step of thinning preferably comprises removing a surface portion of the least one substrate opposite the processed surface, to a thickness of less than about 200 .mu.m. A gettering layer may be formed for the at least one substrate prior to thinning. Accordingly, the step of thinning removes the gettering layer. An implanted region may be formed at a surface of the at least one substrate opposite the processed surface prior to bonding. The implanting may comprise implanting with a lifetime killing implant or a dopant. An epitaxial layer may be formed on the backside of a substrate. The step of processing may include forming a metal layer. Thus, the anneal temperature …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.