Group-III nitride semiconductor light-emitting device
US6153894A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Light-emitting device with excellent emission intensity is difficult to obtain when gallium indium nitride with high indium composition ratio and poor crystallinity is employed as active layer for group-III nitride light-emitting device to emit a comparatively long wavelength light. The invention provides a light-emitting layer on a super lattice structure as a base layer, and crystallinity of the light-emitting layer is then improved. Furthermore, abruptness of a crystal composition at an interface of the light-emitting layer and an upper junction layer is achieved, thus forming a bending portion of a band structure expedient for allowing the emitting-layer to emit a light with a long wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.