Semiconductor component including MOSFET with asymmetric gate electrode where the drain electrode over portions of the lightly doped diffusion region without a gate dielectric

US6153905A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Robert B. Davies · Tempe, US
• Andreas Wild · Weimar, DE

Key dates

• Filing date: Feb 11, 2000
• Grant date: Nov 28, 2000
• Expiry date: Feb 11, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor component includes an asymmetric transistor having two lightly doped drain regions (1300, 1701), a channel region (1702), a source region (1916) located within the channel region (1702), a drain region located outside the channel region (1702), a dielectric structure (1404) located over at least one of the two lightly doped drain regions (1300, 1701), two gate electrodes (1902, 1903) located at opposite sides of the dielectric structure (1404), a drain electrode (1901) overlying the drain region (1915), and a source electrode (1904) overlying the source region (1916). The semiconductor component also includes another transistor having an emitter electrode (122) located between a base electrode (121) and a collector electrode (123) where the base electrode (121) is formed over a dielectric structure (1405).