Semiconductor acceleration sensor and manufacturing method thereof
US6153917A · kind A · utility
38Cited by
8References
7Claims
0Family size
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Key dates
| Filing date | Mar 16, 1999 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Mar 16, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor acceleration sensor including a central board having a movable electrode section, an outside board having a stationary electrode section, and a sealing insulating section for joining the central board and the outside board which are laminated on each other, wherein the sealing insulating section has a conductive layer, and the conductive layer is a sealing member or an anodic bonding electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.