Patent · US Expired

Bipolar transistor with polysilicon dummy emitter

US6153919A · kind A · utility

6Cited by

7References

5Claims

0Family size

Assignee

Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

Håkan Sjödin · Knivsta, SE
Anders Soderbarg · Uppsala, SE
Nils Ogren · Sundbyberg, SE
Ivar Hamberg · Stockholm, SE
Dimitri Olofsson · Danderyd, SE
Karin Andersson · Stockholm, SE

Key dates

Filing date	Jan 26, 1999
Grant date	Nov 28, 2000
Priority date	—
Expiry date	Jan 26, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 .mu.m or better can be achieved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.