SOI sense amplifier with body contact structure
US6154091A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1999 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Jun 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A self-aligned SOI FET device with an "L" shaped gate structure allows an integral diode junction to be formed between the source and the body of the device. Two devices with this gate geometry can be advantageously placed side-by-side in a single rx opening that could accommodate but a single device with a "T" shaped gate structure. The devices in accordance with the teachings of this invention can be easily formed using standard prior art SOI processing steps. An aspect of this invention includes the use of these novel SOI devices with their body and source connected together in circuit applications, such as memory cell sense amplifiers, where high speed operation commends the use of SOI technology, but physical space considerations have limited their application.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.