Nonvolatile semiconductor memory device
US6154391A · kind A · utility
63Cited by
5References
57Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Sep 15, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises an electrically rewritable memory cell transistor, in which a threshold voltage of an erase state of the memory cell transistor is a negative voltage, and a distribution of a threshold voltage of a programming state of the memory cell transistor is a distribution including a negative voltage region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.