Semiconductor laser diode
US6154476A · kind A · utility
5Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Mar 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32316
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode includes a p-type GaAs semiconductor substrate, a p-type region which includes a p-type AlGaAs lower cladding layer, an active layer and an n-type region which includes an n-type AlGaAs upper cladding layer, wherein the n-type AlGaAs upper cladding layer is Al.sub.x Ga.sub.1-x As (x.gtoreq.0.4) having a carrier concentration of no more than 6.times.10.sup.17 cm.sup.-3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.