Fabrication method of making silica-based optical devices and opto-electronic devices
US6154582A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Feb 12, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12104
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a method of fabricating optical devices and in particular to a method of fabricating integrated opto-electronic devices, and to an opto-electronic device. A plasma enhanced chemical vapor deposition process (PECVD) is used to deposit an optical device integrated in silicon onto an electronic device fabricated in silicon. Relatively low temperatures are utilized and, in order to reduce losses of a waveguide in the optical device in the wavelength range 1.50 to 1.53 .mu.m, the deposition process is carried out in the absence of nitrogen. An optical device is disclosed which comprises an integrated construction incorporating an optical waveguide in silica and a photonic transducer in silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.