Method for the purpose of producing a stencil mask

US6156217A · kind A · utility

Assignee

• IMS-Ionen Mikrofabrikationas Systeme · AT

Inventors

• Ernst Hammel · Wien, AT
• Hans Loschner · Wien, AT
• Ivaylo W. Rangelow · Kassel, DE

Key dates

• Filing date: Apr 30, 1999
• Grant date: Dec 5, 2000
• Expiry date: Apr 30, 2019

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/20
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for the purpose of producing a stencil mask, which comprises a sheet having structures in the form of orifices, wherein the method comprises the following sequence of steps: a) selecting a planar, two-dimensional substrate consisting of a specific material comprising a thickness greater than 50 .mu.m, b) producing a thin layer, the so-called intermediate layer on the upper side of the substrate, c) structuring this intermediate layer by means of a lithographic process with the structures for the mask which is to be produced, d) etching the lower side of the substrate at least in the region of the structures provided for the mask orifices, until the substrate comprises in this region a predetermined membrane thickness less than 50 .mu.m, e) etching the upper side of the membrane using the structured intermediate layer as a masking layer, in order to form in this membrane the orifices of the mask which orifices correspond to the structures of the intermediate layer, and f) removing the intermediate layer.