Method for manufacturing contact structure
US6156639A · kind A · utility
6Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1998 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Jul 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a method for manufacturing contact structure to prevent, in the wire of a borderless structure, erosion in the contact area between the wire and a conductor. An interlayer insulating film (300) having a wire burying hole is formed and a conductor (400) is buried in the hole. Then, a wire layer (500) covering the hole is formed on the interlayer insulating film (300). The wire layer (500) is made so as to have a borderless structure by using a resist (540) as a mask. A barrier metal layer (510) suppresses erosion in the contact area between the conductor (400) and the wire layer (500).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.