Patent · US Expired

Electronic device, in particular for switching electric currents, for high reverse voltages and with low on-state losses

US6157049A · kind A · utility

38Cited by

5References

8Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Heinz Mitlehner · Uttenreuth, DE
Michael Stoisiek · Ottobrunn, DE

Key dates

Filing date	Sep 14, 1998
Grant date	Dec 5, 2000
Priority date	—
Expiry date	Sep 14, 2018

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A p-n junction is connected between two terminals. The p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 10.sup.6 V/cm. A channel region, which adjoins the p-n junction is connected in series with a silicon component between the two terminals. The channel region is provided in a first of the two semiconductor regions. A depletion zone of the p-n junction carries the reverse voltage in the off state of the silicon component. The silicon component is preferably a

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.