Integrating dual supply voltage by removing the drain extender implant from the high voltage device

US6157062A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Karthik Vasanth · Dallas, US
• Richard G. Burch · McKinney, US
• Sharad Saxena · Richardson, US
• Purnendu K. Mozumder · Dallas, US
• Chenjing Fernando · Lyndhurst, US
• Joseph C. Davis · Allen, US
• Suraj Rao · Dallas, US

Key dates

• Filing date: Apr 6, 1999
• Grant date: Dec 5, 2000
• Expiry date: Apr 6, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A dual voltage chip is fabricated with no intermediate-doped (LDD or MDD) area in the high-voltage transistors by adjusting the gate sidewall spacer thickness and the source/drain implant.