Metal oxide semiconductor capacitor utilizing dummy lithographic patterns
US6157067A · kind A · utility
12Cited by
10References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 4, 1999 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Jan 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
A semiconductor structure (and method for manufacturing the same) comprises an active array of first elements having a first manufacturing precision, a peripheral region surrounding the active array, the peripheral region including second elements having a second manufacturing precision less than the first manufacturing precision, wherein the second elements are isolated from the active array and comprise passive devices for improving operations of the active array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.