Process for producing a carbon film on a substrate
US6159558A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 1999 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Oct 12, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0605
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a carbon film on a substrate, comprising the steps of (a) depositing a carbon layer of a predetermined thickness onto the substrate, e.g. using off-axis sputtering, the carbon layer having predominantly graphitic or amorphous structure, and (b) treating the carbon layer by means of an radio-frequency discharge in a helium atmosphere wherein the substrate is held at a negative dc bias voltage of a preselected value, where the thickness of the carbon layer deposited in step a) is chosen not greater than the longitudinal stop range of the helium ions corresponding to the bias voltage used in step b). After producing a first carbon layer of a predetermined thickness, a next carbon layer is likewise produced upon the first carbon layer and the procedure can be repeated until the total thickness of the layers attains a desired final thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.