Photoresist development method with reduced cycle time and improved performance
US6159662A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1999 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | May 17, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/3021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for developing a photoresist pattern on a semiconductor wafer using the puddle method is described, wherein the wafer is subjected to several periods of slow rotation while the puddle is in place on the wafer, The process also embraces an improved wafer-to-wafer uniformity of development. A step by step example of the process is given wherein a TMAH developer is used. Two developer puddle applications are used and each puddle undergoes three 2 second rotation periods at 20 rpm., each followed by a 4 second idle period. The intermittent puddle rotations improve the uniformity of development over the wafer thereby improving the uniformity and accuracy of critical dimensions in the resultant pattern. Although the process induced defect densities remain about the same, the sizes of the defects is reduced. In addition, the improved process reduces the overall development cycle time by about 34 percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.