Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate
US6159758A · kind A · utility
3Cited by
2References
5Claims
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Key dates
| Filing date | Jul 9, 1999 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Jul 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.
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