Method of producing a MOS transistor

US6159815A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Bernhard Lustig · Munich, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE
• Martin Franosch · Munich, DE

Key dates

• Filing date: Jun 4, 1999
• Grant date: Dec 12, 2000
• Expiry date: Jun 4, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

In order to produce a MOS transistor with HDD profile and LDD profile, the HDD profile is firstly formed, followed by the LDD profile, in the area for the LDD profile in order to produce steep dopant profiles. The LDD profile is preferably produced by etching and in situ doped selective epitaxy.