Process for adjusting the carrier lifetime in a semiconductor component
US6159830A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1999 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Jul 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for adjusting the carrier lifetime in a semiconductor component (1) by means of particle irradiation (P), at least two defect regions (10, 11, 12, 13) are produced in the semiconductor component (1). In this process, a particle beam (P), consisting of particles (a, b, c, d) with at least approximately the same initial energy, is acted on by at least one means (2), before reaching the semiconductor component (1), in such a way that the particles (a, b, c, d) subsequently have different energy values, at least two energy value groups being distinguishable. It is thereby possible, with a single particle irradiation operation, to produce an arbitrary number of defect regions whose arrangement and weighting is arbitrarily selectable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.