Gas phase removal of SiO.sub.2 /metals from silicon
US6159859A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1998 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Jun 9, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature appropriate to generate and maintain an effective amount of a cleaning reagent to form volatile by-products of the silicon oxides and the metal-containing contaminants and removing the volatile by-products from the surface, wherein the cleaning reagent is a complex of hydrogen fluoride and an oxygen-containing compound selected from the group consisting of one or more of trifluoroacetic acid, trifluoroacetic anhydride, 1,2-propanedione, a .beta.-diketone and a .beta.-diketoimine of the formula: ##STR1##
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.