Self-light-emitting apparatus and semiconductor device used in the apparatus
US6160272A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 9, 1997 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Dec 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
Abstract
A semiconductor device is formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate. The semiconductor device is used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed. A source electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The source electrode is electrically coupled to the source region. A drain electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The drain electrode is electrically coupled to the drain region. An insulation layer is formed on the active layer. A gate electrode is formed on the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.