CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance
US6160282A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 1998 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Apr 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
An active CMOS pixel or pixel array and method for manufacturing uses silicides to improve sheet conductivity of polysilicon and diffusions and for improved conductivity of silicon to metal connections without downgrading the photon sensing performance of the pixels. Masks are used in manufacturing of the pixels by selectively masking photon sensors from the optical opaqueness of silicides and photon sensor related circuit elements from silicide induced photon sensor dark current leakage while allowing formation of silicides for providing highly conductive contacts between. Silicides are used for improving the sheet conductivity of polysilicon and diffusions in the readout transistors and for improved conductivity of silicon to metal line connection pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.