High voltage transistors and thyristors
US6162665A · kind A · utility
22Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 23, 1995 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | May 23, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage transistor or thyristor having a base layer which is a thinned neutron transmuted wafer 102, 152 instead of a diffused or epitaxially grown base layer. The neutron transmuted wafer has high resistivity and a desired thickness while the layer formed overlying the surface of the neutron transmuted wafer has a desired thickness and doping level. Adjusting the thicknesses and doping levels within these two structures produce a device having the desire high voltage characteristics. The various embodiments provides for a high voltage MOSFET 100, IGBT 170, and thyristor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.