Method for forming a fuse in integrated circuit application
US6162686A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Sep 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a grooved fuse (plug fuse) in the same step that via plugs are formed in the guard ring area 14 and in product device areas. A key point of the invention is to form fuses from the via plug layer, not from the metal layers. Also, key guard rings are formed around the plug guise. The invention can include the following: a semiconductor structure is provided having a fuse area, a guard ring area surrounding the fuse area; and a device area. First and second conductive strips are formed. First and second insulating layers are formed over the first and second conductive strips. Plug contacts and fuse plugs are formed through the first and second insulating layers to the first and second conductive strips. A third insulating layer is formed over the second insulating layer. Metal lines are formed over the third insulating layer in the device area. A fuse via opening is formed in the third insulating layer. A plug fuse is formed in the fuse via opening. A fourth insulating layer is formed over the plug fuse and the third insulating layer. A fuse opening is formed at least partially though the fourth insulating layer over the fuse area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.