Low dielectric constant film and method thereof
US6162743A · kind A · utility
24Cited by
9References
18Claims
0Family size
Inventors
Key dates
| Filing date | Feb 10, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Feb 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.