MOS imaging device
US6163030A · kind A · utility
9Cited by
5References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Mar 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A solid state radiation detection unit for producing pixel data from electron-hole producing radiation using a photoelectric conversion layer. One aspect of the invention includes a photoelectric conversion layer that is deposited in direct contact with an array of doped semiconductor pixel contacts. Another aspect of the invention uses a buried field electrode formed within a photoelectric conversion layer. The two inventive concepts can be used separately or combined in a single embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.