Apparatus for improved operation of MOSFET devices in cryogenic environments
US6163064A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 16, 1996 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Aug 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/92
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An electronic circuit that comprises a MOSFET device includes source, drain and gate terminals and operates at cryogenic temperatures. The circuit includes a snubber that is connected between the source and drain terminals of the MOSFET and that has capacitance but substantially no resistance. A control element, which is coupled to at least the gate terminal of the MOSFET device, turns the device "on" (i.e., it effects conduction in the MOSFET) by selectively applying a voltage to the gate terminal that is positive with respect to the source terminal and with respect to ground. The circuit further includes a resistive load, e.g., a resistor, that is coupled in series between the control element and the gate terminal. The control element selectively applies negative-going voltage to the gate terminal, e.g., when the MOSFET is not on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.