High powered laser diode
US6163556A · kind A · utility
2Cited by
8References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 13, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Jul 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/183
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of reducing the amount of unwanted radiation emitted from a semiconductor laser device involves coating a transparent portion the device intended to transmit radiation with a partially reflective layer. The transparent portion is typically the lens cap
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.