Method for semiconductor crystal growth
US6165264A · kind A · utility
2Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for selective growth of semiconductor crystals, including the step of forming a semiconductor layer in a selected region of a semiconductor substrate by using a mask, the semiconductor layer being controlled with respect to atomic ordering or natural super lattice (NSL). It is possible by the invention to control the energy gap, optical anisotropy and electrically conductive anisotropy of a semiconductor layer, and also possible by the invention to carry out two-dimensional control of material properties in a substrate in accordance with a pattern of a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.