Method for forming copper film using chemical vapor deposition
US6165555A · kind A · utility
16Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Jul 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition apparatus and a copper film formation method are disclosed. The chemical vapor deposition apparatus includes a process gas delivery unit including a first storing unit using a liquid deposition source, a delivery unit for transferring a liquid deposition source in the first storing unit to an evaporator, and an evaporator for vaporizing the liquid deposition source transferred from the delivery unit and supplying a process gas; and a reaction chamber for receiving the process gas from the process gas delivery unit and deposition a predetermined thin film on a wafer or substrate mounted therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.