Photoresist composition
US6165677A · kind A · utility
11Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 22, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | May 22, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemical amplifying type positive photoresist composition, excellent in various properties, and not form necking at the potion where the bottom antireflective coating and the resist film contact, which comprises (A) a resin which is converted to alkali-soluble from alkali-insoluble or alkali slightly soluble by the action of an acid, (B) an acid generator, (C) a tertiary amine compound and (D) a diphenyl sulfone compound, and a fine photoresist pattern can be formed in high precision using the photoresist composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.