Method of manufacturing semiconductor device and display device
US6165810A · kind A · utility
8Cited by
8References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 12, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Oct 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method is provided for manufacturing semiconductor elements on a substrate through RTA (Rapid Thermal Annealing) using a lamp. A substrate is sequentially and preliminarily heated using a plurality of preliminary heating plates arranged for stepwise temperature rise before annealing the substrate using the RTA technique. After the heating process, a cooling step may be performed to the substrate to cool it stepwise. The annealing process can prevent a breakage in a substrate due to thermal stress, while the throughput increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.