Method of producing a thin film resistor
US6165862A · kind A · utility
19Cited by
5References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Aug 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/474
Abstract
After a CrSiN film and a TiW film are formed on a substrate through an intermediate insulating layer, a mask pattern is formed on the TiW film. Then a two-step dry etching treatment is performed to etch the TiW film and the CrSiN film into a specific shape. Specifically, first the TiW film is selectively etched under conditions including a large content of fluorine radicals. Then the CrSiN film is selectively etched under conditions including a large content of oxygen radicals. Accordingly, a thin film resistor can be formed with high accuracy with respect to the mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.