Semiconductor integrated circuit device
US6166562A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Feb 25, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A driving voltage supplied to a semiconductor integrated circuit can be controlled. The semiconductor integrated circuit device provided with a voltage converter circuit comprises: a buffer circuit having: a P-channel MOS transistor having a source connected to a first supply voltage; and an N-channel MOS transistor having a source connected to a second supply voltage and a drain connected to a drain of the P-channel MOS transistor, an output voltage being outputted from a common-connected drain terminals of the two MOS transistors; a duty ratio control circuit having: a counter for outputting a first n-bit signal by repeatedly counting up numbers from 0 to (2.sup.n -1) one by one in synchronism with a first clock signal; and a comparator circuit for comparing the first n-bit signal with a second n-bit signal applied from the outside, and for outputting a first control signal to a gate of the P-channel MOS transistor and a second control signal to the N-channel MOS transistor; and a smoothing circuit for smoothing the output of the buffer circuit, a voltage smoothed by the smoothing circuit being outputted as an output of the voltage converter circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.