Semiconductor element with N channel and P region connected only to the channel and liquid crystal display device using the same
US6166786A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | May 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To prevent an n-channel thin-film transistor from being deteriorated by hot holes generated in a gate-negative pulse mode, a thin polysilicon film 10 is provided with a p-type semiconductor region 13 in contact with a channel region 14. The p-type semiconductor region 13 is electrically connected to nowhere except the channel region 14. Holes induced on the surface due to a gate-negative pulse are further supplied from the p-type semiconductor region 13. An electric field established by the gate-negative pulse is relaxed by the holes, fewer hot holes are injected into the gate oxide film, and the TFT characteristics are less deteriorated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.