Method of fabricating a semiconductor light emitting device with etched end surface
US6168964A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 1999 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Jan 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor light emitting device includes fabricating semiconductor light emitting devices on a large scale by forming desirable end surfaces of resonators using an etching process. The method includes the steps of forming, on a base body, semiconductor layers for constituting a plurality of semiconductor light emitting devices; grooving the semiconductor layers formed on the base body in the direction from a front surface of the semiconductor layers to the base body, to form stripe-like grooves; and forming a semiconductor film in the grooves by epitaxial growth; wherein a side surface of each of the grooves, which side surface finally forms an end surface of a resonator of each of the semiconductor light emitting devices, is a crystal plane being later in epitaxial growth rate than a bottom surface of the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.