Photovoltaic devices comprising zinc stannate buffer layer and method for making
US6169246A · kind A · utility
63Cited by
12References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1998 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Sep 8, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
Abstract
A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.