Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer
US6169304A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 1998 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
Abstract
A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.