Photoelectric conversion device and image sensor
US6169317A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1999 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Feb 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
To make the thickness of an interlevel insulating film uniform and suppress variations in output signal, in a photoelectric conversion element including a plurality of photoelectric conversion portions, and light-shielding units having openings formed above the photoelectric conversion portions, the light-shielding units have first light-shielding layers, and second light-shielding layers formed on the first light-shielding layers via an interlevel insulating film. The first light-shielding layers have gaps (GP) for allowing two adjacent openings (OP) to communicate with each other. The second light-shielding layers have light-shielding portions (12a) above the gaps of the first light-shielding layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.